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NTMSD6N303, NVMSD6N303
1600
1400
C iss
T J = 25 ° C
10
Q T
30
1200
1000
800
600
C rss
C iss
8
6
4
V DS
Q 1
Q 2
V GS
20
10
400
200
0
10
C oss
C rss
V DS = 0 V V GS = 0 V
5 0 5 10 15 20
V GS V DS
GATE ? TO ? SOURCE OR DRAIN ? TO ? SOURCE
25
2
0
0
Q 3
2
4
I D = 6 A
T J = 25 ° C
6 8 10 12 14 16 18 20
Q g , TOTAL GATE CHARGE (nC)
0
VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
Figure 8. Gate ? to ? Source and
Drain ? to ? Source Voltage versus Total Charge
1000
100
V DD = 15 V
I D = 6 A
V GS = 10 V
t d(off)
t f
6
5
4
V GS = 0 V
T J = 25 ° C
t r
3
10
t d(on)
2
1
1
1
10
100
0
0.5
0.6
0.7
0.8
0.9
R G , GATE RESISTANCE ( W )
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
V SD , SOURCE ? TO ? DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus
Current
Mounted on 2 ″ sq. FR4 board (1 ″ sq. 2 oz. Cu 0.06 ″
100
thick single sided) with
one die operating, 1.0 ms
10 10 s max.
10 ms
325
300
275
250
225
200
I D = 6 A
1
0.1
V GS = 12 V dc
SINGLE PULSE
T C = 25 ° C
R DS(on) LIMIT
THERMAL LIMIT
175
150
125
100
75
50
0.01
0.1
PACKAGE LIMIT
1.0
10
100
25
0
25
50
75
100
125
150
V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
T J , STARTING JUNCTION TEMPERATURE ( ° C)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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